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نشانی و اطلاعات تماس
تگ Gesource
جزئیات خدمات ترجمه در ترجمه تخصصی
Device fabrication and measurement results have demonstrated steep subthreshold swing
1 Introduction The previous chapters have investigated planar and raised
1 Introduction The previous chapters have investigated planar and raised
Device fabrication and measurement results have demonstrated steep subthreshold swing
Device fabrication and measurement results have demonstrated steep subthreshold swing
1 Introduction The previous chapters have investigated planar and raised
1 Introduction The previous chapters have investigated planar and raised
1 Introduction The previous chapters have investigated planar and raised
1 Introduction The previous chapters have investigated planar and raised
Device fabrication and measurement results have demonstrated steep subthreshold swing
1 Introduction The previous chapters have investigated planar and raised
Raised Ge-Source TFET
Raised Ge-Source TFET
Raised Ge-Source TFET
The measured output characteristics are shown in Fig. 4.15. The drive current for 2.5 V supply
Raised Ge-Source TFET
Gate
In order to mitigate the parasitic forward-bias diode current (dominated by the injection of
Raised Ge-Source TFET
Gate
In order to mitigate the parasitic forward-bias diode current (dominated by the injection of
Raised Ge-Source TFET
