تگ TFET

جزئیات خدمات ترجمه در ترجمه تخصصی

2012 IEEE Computer Society Annual Symposium on VLSI
2012 IEEE Computer Society Annual Symposium on VLSI
Characteristics Opportunities Challenges
Current Applied Physics 15 (2015) 71e77
2070 IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 59, NO. 8, AUGUST 2012
that uses CMOS cores for higher voltages and TFETs for
that uses CMOS cores for higher voltages and TFETs for
Device fabrication and measurement results have demonstrated steep subthreshold swing
1 Introduction The previous chapters have investigated planar and raised
1 Introduction The previous chapters have investigated planar and raised
Device fabrication and measurement results have demonstrated steep subthreshold swing
Device fabrication and measurement results have demonstrated steep subthreshold swing
1 Introduction The previous chapters have investigated planar and raised
1 Introduction The previous chapters have investigated planar and raised
1 Introduction The previous chapters have investigated planar and raised
1 Introduction The previous chapters have investigated planar and raised
Device fabrication and measurement results have demonstrated steep subthreshold swing
1 Introduction The previous chapters have investigated planar and raised
Raised Ge-Source TFET
Solid-State Electronics 98 (2014) 32–37
An Energy-Efﬁcient Heterogeneous CMP based on Hybrid
Raised Ge-Source TFET
Raised Ge-Source TFET
The measured output characteristics are shown in Fig. 4.15. The drive current for 2.5 V supply
Raised Ge-Source TFET
Gate
In order to mitigate the parasitic forward-bias diode current (dominated by the injection of
Raised Ge-Source TFET
Gate
In order to mitigate the parasitic forward-bias diode current (dominated by the injection of
Raised Ge-Source TFET
Microelectronic Engineering 88 (2011) 1301–1304