تگ gate

جزئیات خدمات ترجمه در ترجمه تخصصی

CNTFET
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340 IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, VOL. 13, NO. 2, JUNE 2013
340 IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, VOL. 13, NO. 2, JUNE 2013
340 IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, VOL. 13, NO. 2, JUNE 2013
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Microelectronics Journal 43 (2012) 377–385
Swarm and Evolutionary Computation 10 (2013) 25–30
Electronics 2012, 1, 23-31; doi:10.3390/electronics1010023
Ultra Low-Power and Noise Tolerant CMOS
Ultra Low-Power and Noise Tolerant CMOS
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صفحه 6 تا 10
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Microelectronics Reliability 54 (2014) 1103–1108
Microelectronics Reliability 54 (2014) 1103–1108
Easy and Reliable Detection of Objects by Means of Optical Proximity Switches LOGO! Set 18 LOGO! 0BA6 and 0BA7
Switches and attenuators Microwave switches are essential elements for a
Cover
2009 Ninth International Conference on Quality Software 2009 Ninth International Conference on Quality Software
Transistor A transistor is a semiconductor device used to amplify
138 QUANTUM MEASUREMENT THEORY
Solid-State Electronics 46 (2002) 1595–1601
Spacer FinFET: nanoscale double-gate CMOS technology
part2.16795
308 ADIABATIC QUANTUM COMPUTATION
308 ADIABATIC QUANTUM COMPUTATION
ThinSolidFilms569(2014)6–9
196 QUANTUM GATES AND CIRCUITS
204 QUANTUM ALGORITHMS
5.2 Switching Mixer 235
JOURNAL OF APPLIED PHYSICS VOLUME 93, NUMBER 9 1 MAY 2003
2070 IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 59, NO. 8, AUGUST 2012
A.A. Talin et al. / Solid-State Electronics 45 2001) 963±976 973
Pospieszalski introduced a new noise figure model that took a
2.5.3 Pospieszalski Model
Pospieszalski introduced a new noise figure model that took a
Pospieszalski introduced a new noise figure model that took a
ResearchArticle
Device fabrication and measurement results have demonstrated steep subthreshold swing
Device fabrication and measurement results have demonstrated steep subthreshold swing
Device fabrication and measurement results have demonstrated steep subthreshold swing
scaling can be added for varying gate width and number
5 Discussion of the Model The model is nowchecked against
5 Discussion of the Model The model is nowchecked against
Pospieszalski introduced a new noise figure model that took a
2.5.3 Pospieszalski Model
2.5.3 Pospieszalski Model
Device fabrication and measurement results have demonstrated steep subthreshold swing
Raised Ge-Source TFET
Raised Ge-Source TFET
Raised Ge-Source TFET
Raised Ge-Source TFET
Raised Ge-Source TFET
Raised Ge-Source TFET
CHAPTER 2. NOISE FIGURE MODELING OF ALGAN/GAN HEMTS
CHAPTER 2. NOISE FIGURE MODELING OF ALGAN/GAN HEMTS
are the values to be determined based on the unscaled
CHAPTER 2. NOISE FIGURE MODELING OF ALGAN/GAN HEMTS
CHAPTER 2. NOISE FIGURE MODELING OF ALGAN/GAN HEMTS
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A LOW VOLTAGE DESIGN TECHNIQUE FOR LOW NOISE RF
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IEEE TRANSACTIONS ON NANOTECHNOLOGY, VOL. 1, NO. 3, SEPTEMBER 2002 145
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Molecular Transistor Circuits: From Device Model to Circuit Simulation
CRITICAL PATH TRACING - AN ALTERNATIVE TO FAULT SIMULATION
Microelectronic Engineering 88 (2011) 1301–1304
LETTERS
CHAPTER9
Organic Electronics 24 (2015) 37–42
Simulations of molecular logic gates
CHAPTER 1
Chapter3
New UAE app rewards activity For active fitness fan who
Quantum-dot Cellular Automata (QCA)
2014 2nd International Conference on Devices, Circuits and Systems (ICDCS) 1
2013 IEEE INTERNATIONAL CONFERENCE ON CIRCUITS AND SYSTEMS
2014 2nd International Conference on Devices, Circuits and Systems (ICDCS) 1
2014 2nd International Conference on Devices, Circuits and Systems (ICDCS) 1
12th WSEAS International Conference on COMPUTERS, Heraklion, Greece, July 23-25, 2008
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Circuits and Systems, 2013, 4, 147-156
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IJCSI International Journal of Computer Science Issues, Vol. 8, Issue 6, No 1, November 2011
Circuits and Systems, 2013, 4, 147-156
12th WSEAS International Conference on COMPUTERS, Heraklion, Greece, July 23-25, 2008
Journal of Advances in Computer Research
Journal of Advances in Computer Research
IJCSI International Journal of Computer Science Issues, Vol. 8, Issue 6, No 1, November 2011
Journal of Advances in Computer Research
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IJCSI International Journal of Computer Science Issues, Vol. 8, Issue 6, No 1, November 2011
Materials Science in Semiconductor Processing 15 (2012) 572–577
Journal of Advances in Computer Research
Journal of Advances in Computer Research
Journal of Advances in Computer Research
Journal of Advances in Computer Research
Journal of Advances in Computer Research
12th WSEAS International Conference on COMPUTERS, Heraklion, Greece, July 23-25, 2008
Solid-State Electronics xxx (2015) xxx–xxx
Circuits and Systems, 2013, 4, 147-156
Journal of Advances in Computer Research
Hindawi Publishing Corporation
retains its state when the power is removed from the
Applied Superconductivity:
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Indian J. Phys., Vol. 85, No. 3, pp. 369-377, March, 2011
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Journal of Visual Languages and Computing 31 (2015) 130–138
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Organic-Inorganic Flexible and Transparent Electronics
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LONG TERM SHOR Y MEMOR
1972 IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 44, NO. 11, NOVEMBER 1997
www.nature.com/scientificreports
Electrical Engineering Essentials
Electrical Engineering Essentials
there is no need for compensation so neither the area
there is no need for compensation so neither the area
there is no need for compensation so neither the area
1282 IEEE JOURNAL OF SOLID-STATE CIRCUITS, VOL. 39, NO. 8, AUGUST 2004
VLSI
The first feedback loop is designed for transcoductance boosting which
APRON LAYOUT DESIGN AND FLIGHT-TO-GATE ASSIGNMENT AT LANSERIA
Journal of Nanoparticle Research 3: 27–37, 2001.
http://tarjomebazar.com
3186 IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 54, NO. 12, DECEMBER 2007
IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 54, NO. 12, DECEMBER 2007 3195
Electromagnetic interactions of metal detectors
Design of Reversible Random Access Memory
J Comput Electron
Microelectronics Journal 46 (2015) 462–471
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Accepted Manuscript
Preface
Chapter1
IEEE ELECTRON DEVICE LETTERS, VOL. 36, NO. 7, JULY 2015 645
coli CIC pores differ fundamentally in amino acid sequence and
Second A
Application Report