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نشانی و اطلاعات تماس
تگ tunneling
جزئیات خدمات ترجمه در ترجمه تخصصی
Current Applied Physics 15 (2015) 71e77
2070 IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 59, NO. 8, AUGUST 2012
Two-dimensional Bias Dependent Model for the
Device fabrication and measurement results have demonstrated steep subthreshold swing
Device fabrication and measurement results have demonstrated steep subthreshold swing
Device fabrication and measurement results have demonstrated steep subthreshold swing
Solid-State Electronics 98 (2014) 32–37
Raised Ge-Source TFET
Raised Ge-Source TFET
Raised Ge-Source TFET
Connecting TCAD To Tapeout A Journal for Process and Device Engineers
J Comput Electron (2008) 7: 394–397
Automation in Construction 20 (2011) 1087–1095
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In the case of STM it is possible to prepare
